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Ebihara, Kenichi; Sugiyama, Yuri*; Matsumoto, Ryosuke*; Takai, Kenichi*; Suzudo, Tomoaki
Metallurgical and Materials Transactions A, 52(1), p.257 - 269, 2021/01
Times Cited Count：9 Percentile：51.51(Materials Science, Multidisciplinary)We simulated the thermal desorption spectra of a small-size iron specimen to which was applied during charging with hydrogen atoms using a model incorporating the behavior of vacancies and vacancy clusters. The model considered up to vacancy clusters 
, which is composed of nine vacancies and employed the parameters based on atomistic calculations, including the H trapping energy of vacancies and vacancy clusters that we estimated using the molecular static calculation. As a result, we revealed that the model could, on the whole, reproduced the experimental spectra except two characteristic differences, and also the dependence of the spectra on the aging temperature. By examining the cause of the differences, the possibilities that the diffusion of clusters of 
and 
is slower than the model and that vacancy clusters are generated by applying strain and H charging concurrently were indicated.
Chimi, Yasuhiro; Iwase, Akihiro; Ishikawa, Norito; Kambara, Tadashi*
Nuclear Instruments and Methods in Physics Research B, 193(1-4), p.248 - 252, 2002/06
Times Cited Count：2 Percentile：18.93(Instruments & Instrumentation)no abstracts in English
80KChimi, Yasuhiro; Iwase, Akihiro; Ishikawa, Norito
Journal of Nuclear Materials, 271-272, p.236 - 240, 1999/00
Times Cited Count：8 Percentile：53.62(Materials Science, Multidisciplinary)no abstracts in English
80K with energetic particlesChimi, Yasuhiro; Iwase, Akihiro; Ishikawa, Norito
Mat. Res. Soc. Symp. Proc., 504, p.221 - 226, 1998/00
no abstracts in English
Cu
Oy irradiated with energetic ions at low temperatureIshikawa, Norito; Chimi, Yasuhiro; Iwase, Akihiro; *; Michikami, Osamu*
Mat. Res. Soc. Symp. Proc., 504, p.171 - 175, 1998/00
no abstracts in English
Ishikawa, Norito; Chimi, Yasuhiro; Iwase, Akihiro; Maeta, Hiroshi; *; Michikami, Osamu*; Kambara, Tadashi*; *; *; Terasawa, M.*
Nuclear Instruments and Methods in Physics Research B, 135, p.184 - 189, 1998/00
Times Cited Count：15 Percentile：73.06(Instruments & Instrumentation)no abstracts in English
Ishikawa, Norito; Chimi, Yasuhiro; Iwase, Akihiro; *; Michikami, Osamu*; Kambara, Tadashi*
RIKEN Accelerator Progress Report, 31, P. 97, 1998/00
no abstracts in English
n diodes embedded with InAs quantum dot layersSato, Shinichiro; Schmieder, K.*; Hubbard, S.*; Forbes, D.*; Warner, J.*; Oshima, Takeshi; Walters, R.*
no journal, ,
III-V semiconductor devices embedded with quantum dots (QDs) are expected to be applied to next generation space solar cells. High density QDs and highly stacked QD layers without stacking fault are required in order to relaize QD solar cells, and have been obtained recently by using strain compensating technology. However, larger amount of defects are still incorporated into QD devices compared to single crystal devices and affect the device characteristics. In this study, we fabricated GaAs pn diode with 10 layers of InAs QDs by Metal Organic Vapor Phase Epitaxy (MOVPE) method and characterized defect levels in the devices using Deel Level Transient Spectroscopy (DLTS). The results were compared to reference samples which were GaAs pn diodes without InAs QDs. It was shown that unique electron and hole trap levels were found in the QD devices and thus we concluded that these traps should be reduced in order to improve the device quality.
